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| AP2304N Advanced Power Electronics Corp. Simple Drive Requirement Small package outline Surface mount package S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 117m 2.7A Description SOT-23 G The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1,2 3 3 Rating 25 20 2.7 2.2 10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit /W Data and specifications subject to change without notice 200420043 AP2304N Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 25 1 - Typ. 0.1 Max. Units 117 190 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS=10V, ID=2.5A VGS=4.5V, ID=2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55 C) o o VDS=VGS, ID=250uA VDS=4.5V, ID=2.5A VDS=25V, VGS=0V VDS=25V ,VGS=0V VGS=20V ID=2.5A VDS=15V VGS=10V VDS=15V ID=1A RG=6,VGS=10V RD=15 VGS=0V VDS=15V f=1.0MHz 3.4 5.9 0.8 2.1 4.5 11.5 12 3 110 85 39 3 1 10 100 10 - Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.2V 1 Min. - Typ. - Max. Units 1 10 1.2 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 IS=1.25A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270/W when mounted on min. copper pad. AP2304N 10 10 V GS =10V - 5V 8 T A =25 o C 8 T A =150 o C V GS =10V - 5V ID , Drain Current (A) ID , Drain Current (A) 6 6 V GS =4V 4 V GS =4V 4 2 2 V GS =3V 0 0 V GS =3V 10 0 2 4 6 8 0 2 4 6 8 10 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 700 1.8 600 I D =2A T A =25 Normalized R DS(ON) 1.6 V GS =10V I D =2.5A 500 RDS(ON) (m ) 1.4 400 1.2 300 1.0 200 0.8 100 0 0 2 4 6 8 10 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.25 10 2.05 1 VGS(th) (V) 1.3 IF (A) 1.85 T j =150 C o T j =25 C o 1.65 0 0.1 0.5 0.9 1.45 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2304N f=1.0MHz 10 1000 VGS , Gate to Source Voltage (V) 8 V DS =15V I D =2.5A 6 C (pF) 100 C iss C oss 4 2 C rss 0 0 1 2 3 4 5 6 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (Rthja) 0.2 10 0.1 0.1 0.05 ID (A) 1ms 1 PDM 0.01 t T 10ms 0 0.01 Single Pulse T A =25 o C Single Pulse 100ms 1s DC Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270/W 0 0.001 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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